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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION *Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) *High Speed Switching * APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 900 V 800 V 7 V 3 A 5 A 1 A 60 W .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3376 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A VCB= 800V; IE= 0 1.2 V Collector Cutoff Current 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain Switching Times; Resistive Load tr ts tf Rise Time Storage Time Fall Time w w scs .i w IC= 0.8A; VCE= 5V .cn mi e 10 1.0 mA 1.0 s s s IB1= 0.08A; IB2= -0.2A; VCC 400V; RL= 500 4.0 1.0 isc Websitewww.iscsemi.cn |
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